BSR58LT1G
onsemi
onsemi
JFET N-CH 40V 350MW SOT23
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Product details
Experience superior performance with the BSR58LT1G JFET transistor from onsemi, a key component in Discrete Semiconductor Products. This transistor is designed for high-speed and low-noise applications, ensuring optimal signal integrity. Its features include high gain bandwidth and low power dissipation, making it energy-efficient. The BSR58LT1G is widely used in video amplification, telecommunication systems, and audio equipment. It also serves critical roles in military and aerospace electronics, where reliability is paramount. For projects requiring a high-performance JFET transistor, the BSR58LT1G is an ideal choice. Contact us today to discuss your needs and secure your supply.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 60 Ohms
- Power - Max: 350 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
