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BC846BDW1T1G

onsemi
BC846BDW1T1G Preview
onsemi
TRANS 2NPN 65V 0.1A SC88/SC70-6
$0.29
Available to order
Reference Price (USD)
3,000+
$0.04108
6,000+
$0.03592
15,000+
$0.03075
30,000+
$0.02903
75,000+
$0.02731
150,000+
$0.02444
Exquisite packaging
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BC846BDW1T1G

BC846BDW1T1G

$0.29

Product details

Enhance your electronic designs with the BC846BDW1T1G BJT Array from onsemi, a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The BC846BDW1T1G excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The BC846BDW1T1G is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The BC846BDW1T1G stands as a testament to onsemi's commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the BC846BDW1T1G and elevate your electronic designs.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

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