Shopping cart

Subtotal: $0.00

BC807-40LT1G

onsemi
BC807-40LT1G Preview
onsemi
TRANS PNP 45V 0.5A SOT23-3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03404
6,000+
$0.03081
15,000+
$0.02694
30,000+
$0.02435
75,000+
$0.02177
150,000+
$0.01833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi BC807-40LT1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BC807-40LT1G

BC807-40LT1G

$0.21

Product details

The BC807-40LT1G by onsemi sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The BC807-40LT1G commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. onsemi's commitment to innovation is evident in the BC807-40LT1G's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)

Viewed products

NTE Electronics, Inc

MJ15003

$0.00 (not set)
Taiwan Semiconductor Corporation

BC848CW RFG

$0.00 (not set)
onsemi

BC846AMTF-ON

$0.00 (not set)
Ampleon USA Inc.

RX1214B280YH

$0.00 (not set)
Rohm Semiconductor

2SD2226KT146V

$0.00 (not set)
NTE Electronics, Inc

NTE101

$0.00 (not set)
Renesas Electronics America Inc

2SA1008-AZ

$0.00 (not set)
Diodes Incorporated

FZT949QTA

$0.00 (not set)
onsemi

SMBT1588LT3

$0.00 (not set)
Diodes Incorporated

DXT2011P5Q-13

$0.00 (not set)
Top