AFGY120T65SPD
onsemi
onsemi
IGBT - 650 V 120 A FS3 FOR EV TR
$12.26
Available to order
Reference Price (USD)
1+
$12.26000
500+
$12.1374
1000+
$12.0148
1500+
$11.8922
2000+
$11.7696
2500+
$11.647
Exquisite packaging
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AFGY120T65SPD
$12.26
Product details
Maximize power efficiency with the AFGY120T65SPD single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The AFGY120T65SPD features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the AFGY120T65SPD delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
- Power - Max: 714 W
- Switching Energy: 6.6mJ (on), 3.8mJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 40ns/80ns
- Test Condition: 400V, 120A, 5Ohm, 15V
- Reverse Recovery Time (trr): 107 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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