AFGB30T65SQDN
onsemi
onsemi
650V/30A FS4 IGBT TO263 A
$4.76
Available to order
Reference Price (USD)
800+
$2.56620
Exquisite packaging
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AFGB30T65SQDN
$4.76
Product details
Upgrade your power electronics with the AFGB30T65SQDN single IGBT transistor from onsemi. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The AFGB30T65SQDN features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the AFGB30T65SQDN delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 220 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 14.5ns/63.2ns
- Test Condition: 400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr): 245 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK-3 (TO-263-3)
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