2SJ670-TD-E
onsemi
onsemi
P-CHANNEL SILICON MOSFET
$0.24
Available to order
Reference Price (USD)
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$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
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2SJ670-TD-E
$0.24
Product details
Enhance your electronic designs with the 2SJ670-TD-E single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The 2SJ670-TD-E features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the 2SJ670-TD-E particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the 2SJ670-TD-E represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.
General specs
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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