2SJ660-DL-E
onsemi
onsemi
PCH 4V DRIVE SERIES
$1.50
Available to order
Reference Price (USD)
1+
$1.50000
500+
$1.485
1000+
$1.47
1500+
$1.455
2000+
$1.44
2500+
$1.425
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2SJ660-DL-E
$1.50
Product details
Discover the 2SJ660-DL-E RF MOSFET transistor from onsemi, a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The 2SJ660-DL-E is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The 2SJ660-DL-E is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The 2SJ660-DL-E delivers consistent performance across a wide range of frequencies. onsemi has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the 2SJ660-DL-E is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the 2SJ660-DL-E from onsemi for all your RF needs.
General specs
- Product Status: Active
- Transistor Type: -
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