2SD734F
onsemi
onsemi
NPN EPITAXIAL PLANAR SILICON TRA
$0.12
Available to order
Reference Price (USD)
1+
$0.12480
500+
$0.123552
1000+
$0.122304
1500+
$0.121056
2000+
$0.119808
2500+
$0.11856
Exquisite packaging
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2SD734F
$0.12
Product details
The 2SD734F by onsemi sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The 2SD734F commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. onsemi's commitment to innovation is evident in the 2SD734F's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
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