Shopping cart

Subtotal: $0.00

2N5550TA

onsemi
2N5550TA Preview
onsemi
TRANS NPN 140V 0.6A TO92-3
$0.45
Available to order
Reference Price (USD)
2,000+
$0.04444
6,000+
$0.03864
10,000+
$0.03284
50,000+
$0.02898
100,000+
$0.02576
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi 2N5550TA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N5550TA

2N5550TA

$0.45

Product details

Enhance your electronic designs with the 2N5550TA, a premium Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The 2N5550TA features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The 2N5550TA is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92-3

Viewed products

Diodes Incorporated

AC817-40Q-7

$0.00 (not set)
onsemi

MJE210TG

$0.00 (not set)
Nexperia USA Inc.

PBSS5240XX

$0.00 (not set)
Harris Corporation

HFA1212IP

$0.00 (not set)
NXP USA Inc.

PMBT3906/DG215

$0.00 (not set)
Microchip Technology

JANSR2N3439L

$0.00 (not set)
Microchip Technology

2N3440E3

$0.00 (not set)
Nexperia USA Inc.

BC817-16,235

$0.00 (not set)
Rohm Semiconductor

2SD2391T100Q

$0.00 (not set)
onsemi

NJVTIP31CG

$0.00 (not set)
Top