PSMN2R0-60ES,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN2R0-60ES - 120A, 60
$1.29
Available to order
Reference Price (USD)
1+
$3.51000
50+
$2.82160
100+
$2.57070
500+
$2.08164
1,000+
$1.75560
Exquisite packaging
Discount
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| EMS | 3-7 days |
NXP Semiconductors PSMN2R0-60ES,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PSMN2R0-60ES,127
$1.29
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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