PSMN070-200P,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN070-200P - 35A, 200
$1.04
Available to order
Reference Price (USD)
1+
$1.04000
500+
$1.0296
1000+
$1.0192
1500+
$1.0088
2000+
$0.9984
2500+
$0.988
Exquisite packaging
Discount
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| EMS | 3-7 days |
NXP Semiconductors PSMN070-200P,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PSMN070-200P,127
$1.04
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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