PMZB290UNE,315
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.07035
30,000+
$0.06650
50,000+
$0.05996
100,000+
$0.05880
Exquisite packaging
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| EMS | 3-7 days |
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PMZB290UNE,315
$0.04
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
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