PMBFJ309,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
$0.00
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3,000+
$0.15466
6,000+
$0.14652
15,000+
$0.13838
30,000+
$0.13431
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PMBFJ309,215
$0.00
Product details
The PMBFJ309,215 from NXP USA Inc. is a high-performance JFET transistor designed for precision amplification and switching applications. As part of the Discrete Semiconductor Products category, this transistor offers excellent noise performance and low power consumption, making it ideal for sensitive electronic circuits. Its robust construction ensures reliability in various operating conditions, catering to both industrial and commercial needs. The PMBFJ309,215 is engineered to deliver consistent performance, providing stable operation across a wide range of frequencies. Whether you're designing audio equipment or RF systems, this JFET transistor is a versatile choice. Key features include high input impedance, low distortion, and superior thermal stability. These characteristics make it suitable for applications requiring minimal signal interference and high fidelity. Common uses include audio preamplifiers, sensor interfaces, and communication systems. Industries such as telecommunications, medical devices, and automotive electronics benefit from its precision and durability. For pricing and availability, submit an inquiry today and let our team assist you with your procurement needs.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): 50 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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