PMBFJ113,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 40V 0.3W SOT23
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
NXP USA Inc. PMBFJ113,215 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PMBFJ113,215
$0.00
Product details
Enhance your circuit designs with the PMBFJ113,215 JFET transistor from NXP USA Inc., a standout in the Discrete Semiconductor Products lineup. This transistor is optimized for low-noise applications, offering exceptional signal clarity and efficiency. Its design focuses on minimizing power loss while maximizing performance, making it a preferred choice for battery-operated devices. The PMBFJ113,215 excels in environments where signal integrity is paramount, such as in instrumentation and measurement systems. Features like high gain and low leakage current ensure reliable operation in demanding scenarios. Applications span across audio processing, signal conditioning, and RF modulation. Industries leveraging this technology include consumer electronics, aerospace, and industrial automation. The PMBFJ113,215 is also well-suited for use in test and measurement equipment, where accuracy is critical. To explore how this JFET transistor can benefit your projects, contact us for a detailed quote and technical support.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Resistance - RDS(On): 100 Ohms
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
Viewed products
