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PDTA144WE,115

NXP USA Inc.
PDTA144WE,115 Preview
NXP USA Inc.
TRANS PREBIAS PNP 150MW SC75
$0.02
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PDTA144WE,115

PDTA144WE,115

$0.02

Product details

The PDTA144WE,115 from NXP USA Inc. revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on PDTA144WE,115 integration.

General specs

  • Product Status: Obsolete
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75

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