PDTA143EQA147
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.03
Available to order
Reference Price (USD)
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$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
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PDTA143EQA147
$0.03
Product details
Experience superior semiconductor performance with the PDTA143EQA147, a high-efficiency Bipolar Junction Transistor from NXP USA Inc.. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The PDTA143EQA147 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. NXP USA Inc. produces the PDTA143EQA147 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the PDTA143EQA147 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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