PBLS4004V,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN PREBIAS/PNP SOT666
$0.07
Available to order
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500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
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PBLS4004V,115
$0.07
Product details
Discover the PBLS4004V,115 from NXP USA Inc., a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The PBLS4004V,115 features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the PBLS4004V,115 delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the PBLS4004V,115 is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the PBLS4004V,115 can meet your specific requirements, request a quote today and our experts will assist you promptly.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 300MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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