PBLS2002S,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN PREBIAS/PNP 1.5W 8SO
$0.10
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PBLS2002S,115
$0.10
Product details
Explore the PBLS2002S,115 from NXP USA Inc., a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The PBLS2002S,115 features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the PBLS2002S,115 provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the PBLS2002S,115 is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the PBLS2002S,115 can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max): 50V, 20V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 100MHz
- Power - Max: 1.5W
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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