PBLS1503V,115-NXP
NXP USA Inc.
NXP USA Inc.
0.1A 50V 2-ELEMENT NPN AND PNP
$0.07
Available to order
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$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
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PBLS1503V,115-NXP
$0.07
Product details
The PBLS1503V,115-NXP from NXP USA Inc. is a high-performance pre-biased bipolar junction transistor (BJT) array designed for efficient switching and amplification applications. This product is part of the Discrete Semiconductor Products category, specifically tailored for Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It offers excellent thermal stability and consistent performance, making it ideal for various electronic circuits. The PBLS1503V,115-NXP ensures reliable operation in compact designs, providing engineers with a versatile solution for their projects. With its robust construction and advanced technology, this BJT array is a must-have for modern electronics. Key features include integrated pre-biasing for simplified circuit design, low power consumption, and high gain. These transistors are perfect for applications requiring precise control and signal amplification. The PBLS1503V,115-NXP is widely used in automotive electronics, industrial control systems, and consumer electronics. Its compact form factor and high reliability make it suitable for space-constrained applications. For pricing and availability, submit an inquiry today and let our team assist you with your specific requirements.
General specs
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 15V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, 200 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 280MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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