MW7IC2040NR1
NXP Semiconductors
NXP Semiconductors
NARROW BAND HIGH POWER AMPLIFIER
$55.08
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500+
$44.94950
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MW7IC2040NR1
$55.08
Product details
Optimize your RF applications with the MW7IC2040NR1 RF MOSFET transistor from NXP Semiconductors, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MW7IC2040NR1 handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The MW7IC2040NR1 is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The MW7IC2040NR1 ensures consistent operation across various frequencies. NXP Semiconductors has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the MW7IC2040NR1 is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the MW7IC2040NR1 from NXP Semiconductors for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.99GHz ~ 1.93GHz, 1.88GHz ~ 1.805GHz
- Gain: 32dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 330 mA
- Power - Output: 4W
- Voltage - Rated: 65 V
- Package / Case: TO-270-16 Variant, Flat Leads
- Supplier Device Package: TO-270WB-16
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