MRF7S19210HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.99GHZ NI780S
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MRF7S19210HSR3
$0.00
Product details
Discover the MRF7S19210HSR3 RF MOSFET transistor from NXP USA Inc., a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The MRF7S19210HSR3 is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The MRF7S19210HSR3 is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The MRF7S19210HSR3 delivers consistent performance across a wide range of frequencies. NXP USA Inc. has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the MRF7S19210HSR3 is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the MRF7S19210HSR3 from NXP USA Inc. for all your RF needs.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 20dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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