MRF6VP3450HR5
NXP Semiconductors
NXP Semiconductors
LATERAL N-CHANNEL BROADBAND RF P
$207.80
Available to order
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MRF6VP3450HR5
$207.80
Product details
Upgrade your RF systems with the MRF6VP3450HR5 RF MOSFET transistor from NXP Semiconductors, a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The MRF6VP3450HR5 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the MRF6VP3450HR5 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The MRF6VP3450HR5 ensures accurate and stable signal processing in all scenarios. NXP Semiconductors has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the MRF6VP3450HR5 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the MRF6VP3450HR5 from NXP Semiconductors for superior RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 470MHz ~ 860MHz
- Gain: 22.5dB
- Voltage - Test: 50 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 450W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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