BUK9E2R8-60E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 120A I2PAK
$1.20
Available to order
Reference Price (USD)
1+
$1.20000
500+
$1.188
1000+
$1.176
1500+
$1.164
2000+
$1.152
2500+
$1.14
Exquisite packaging
Discount
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| EMS | 3-7 days |
NXP USA Inc. BUK9E2R8-60E,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BUK9E2R8-60E,127
$1.20
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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