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BUK9E2R8-60E,127

NXP USA Inc.
BUK9E2R8-60E,127 Preview
NXP USA Inc.
MOSFET N-CH 60V 120A I2PAK
$1.20
Available to order
Reference Price (USD)
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$1.188
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$1.176
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$1.164
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$1.152
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$1.14
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NXP USA Inc. BUK9E2R8-60E,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BUK9E2R8-60E,127

BUK9E2R8-60E,127

$1.20

Product details

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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