BT150S-600R,118
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BT150S-600R - SILICON
$0.33
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BT150S-600R,118
$0.33
Product details
NXP USA Inc.'s BT150S-600R,118 brings innovation to SCR technology with its high-efficiency design for modern power electronics. As part of the Discrete Semiconductor Products range, this thyristor delivers precise current control with minimal power loss, suitable for both AC and DC applications. Its architecture ensures reliable performance in high-temperature industrial environments.
The BT150S-600R,118 features include superior surge current capability, low thermal resistance, and optimized switching characteristics. The device offers excellent static and dynamic performance parameters, with special attention to gate sensitivity and turn-off time. Its package design facilitates effective heat dissipation in compact installations.
Industrial application highlights: 1) Power control in industrial microwave systems, 2) Current regulation for electroplating equipment, and 3) Motor drives in material handling systems. The component also serves effectively in electric vehicle charging stations, industrial oven controls, and high-power laboratory equipment.
Submit your project requirements through our online portal to receive customized solutions featuring the BT150S-600R,118. Our team provides technical support and volume pricing options for industrial clients.
General specs
- Product Status: Active
- Voltage - Off State: 600 V
- Voltage - Gate Trigger (Vgt) (Max): 1 V
- Current - Gate Trigger (Igt) (Max): 200 µA
- Voltage - On State (Vtm) (Max): 1.8 V
- Current - On State (It (AV)) (Max): 2.5 A
- Current - On State (It (RMS)) (Max): 4 A
- Current - Hold (Ih) (Max): 6 mA
- Current - Off State (Max): 500 µA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 38A
- SCR Type: Sensitive Gate
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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