BLM7G1822S-20PBY
NXP Semiconductors
NXP Semiconductors
BLM7G1822S-20PB - LDMOS 2-STAGE
$24.09
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$26.48470
300+
$25.18217
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BLM7G1822S-20PBY
$24.09
Product details
Optimize your RF applications with the BLM7G1822S-20PBY RF MOSFET transistor from NXP Semiconductors, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLM7G1822S-20PBY handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The BLM7G1822S-20PBY is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The BLM7G1822S-20PBY ensures consistent operation across various frequencies. NXP Semiconductors has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the BLM7G1822S-20PBY is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the BLM7G1822S-20PBY from NXP Semiconductors for superior RF solutions.
General specs
- Product Status: Active
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