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BLF7G24L-160P,112

NXP USA Inc.
BLF7G24L-160P,112 Preview
NXP USA Inc.
RF TRANSISTOR
$113.82
Available to order
Reference Price (USD)
1+
$113.82000
500+
$112.6818
1000+
$111.5436
1500+
$110.4054
2000+
$109.2672
2500+
$108.129
Exquisite packaging
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NXP USA Inc. BLF7G24L-160P,112 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BLF7G24L-160P,112

BLF7G24L-160P,112

$113.82

Product details

The BLF7G24L-160P,112 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the BLF7G24L-160P,112 delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The BLF7G24L-160P,112 is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The BLF7G24L-160P,112 is a versatile solution for modern electronic systems requiring high-frequency operation. Trust NXP USA Inc. for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the BLF7G24L-160P,112 suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The BLF7G24L-160P,112 ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the BLF7G24L-160P,112 is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the BLF7G24L-160P,112 from NXP USA Inc..

General specs

  • Product Status: Obsolete
  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28 V
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 30W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-539A
  • Supplier Device Package: SOT539A

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