BLF6G10LS-160RN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$81.82
Available to order
Reference Price (USD)
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$81.82000
500+
$81.0018
1000+
$80.1836
1500+
$79.3654
2000+
$78.5472
2500+
$77.729
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BLF6G10LS-160RN112
$81.82
Product details
Optimize your RF circuits with the BLF6G10LS-160RN112 BJT transistor from NXP USA Inc., a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the BLF6G10LS-160RN112 saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. NXP USA Inc. backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the BLF6G10LS-160RN112 offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.
General specs
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
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- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
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