BLF6G10LS-135RN112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$70.31
Available to order
Reference Price (USD)
1+
$70.31000
500+
$69.6069
1000+
$68.9038
1500+
$68.2007
2000+
$67.4976
2500+
$66.7945
Exquisite packaging
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BLF6G10LS-135RN112
$70.31
Product details
Optimize your circuit performance with the BLF6G10LS-135RN112, a precision Bipolar Junction Transistor from NXP USA Inc.. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The BLF6G10LS-135RN112 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NXP USA Inc. employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The BLF6G10LS-135RN112 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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