BLA6G1011LS-200RG11
NXP USA Inc.

NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$355.49
Available to order
Reference Price (USD)
1+
$355.49000
500+
$351.9351
1000+
$348.3802
1500+
$344.8253
2000+
$341.2704
2500+
$337.7155
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NXP USA Inc. BLA6G1011LS-200RG11 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Upgrade your electronic designs with the BLA6G1011LS-200RG11, a high-reliability Bipolar Junction Transistor from NXP USA Inc.. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The BLA6G1011LS-200RG11 demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. NXP USA Inc. subjects each BLA6G1011LS-200RG11 unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the BLA6G1011LS-200RG11 delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -