BFU730LXZ
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 3V 53GHZ 3DFN1006
$0.51
Available to order
Reference Price (USD)
10,000+
$0.12591
30,000+
$0.11578
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
NXP USA Inc. BFU730LXZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BFU730LXZ
$0.51
Product details
The BFU730LXZ from NXP USA Inc. represents a breakthrough in RF BJT transistor technology for discrete semiconductor applications. This high-performance bipolar transistor features an innovative emitter ballasting technique that ensures uniform current distribution under high-power conditions. Its optimized geometry reduces parasitic inductance while enhancing thermal dissipation properties. The device demonstrates exceptional third-order intercept point (IP3) performance for demanding linearity requirements. Wireless infrastructure designers utilize this component in macrocell and microcell base station power amplifiers. Satellite payload engineers specify it for transponder signal conditioning and low-noise block converter designs. In automotive applications, it supports advanced driver assistance systems (ADAS) and vehicle infotainment modules. The BFU730LXZ also enables breakthrough performance in radio astronomy receivers and quantum communication systems. Its lead-frame design minimizes bond wire inductance for improved high-frequency response. NXP USA Inc. provides complete characterization data including noise figure contours and stability factor plots. The product undergoes stringent quality control measures with full traceability throughout the manufacturing process. For design engineers seeking to push RF performance boundaries, the BFU730LXZ offers measurable advantages. Download our application notes on impedance matching techniques or thermal management best practices. Request a personalized consultation to determine how this transistor can optimize your specific circuit design parameters.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3V
- Frequency - Transition: 53GHz
- Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
- Gain: 15.8dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006C-3
Viewed products
