BFU550XR215
NXP USA Inc.
NXP USA Inc.
NPN RF TRANSISTOR
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BFU550XR215
$0.00
Product details
Elevate your RF designs with NXP USA Inc.'s BFU550XR215 bipolar junction transistor, a premium choice in discrete semiconductor components. This BJT features exceptional gain flatness across wide bandwidths, making it ideal for multi-channel communication systems. Its advanced surface treatment process reduces recombination losses while improving high-frequency response. The transistor offers excellent parameter consistency with tight production tolerances for predictable performance. Key application areas include phased array radar systems requiring precise amplitude and phase matching. Commercial wireless applications span LTE-Advanced and 5G NR small cell power amplifiers. In industrial settings, it enables reliable operation in RFID readers and wireless process monitoring equipment. The medical diagnostics sector benefits from its low-noise characteristics in portable ultrasound imaging devices. The BFU550XR215 also supports critical functions in electronic countermeasure systems and spectrum monitoring equipment. Its versatile packaging options accommodate various heat sinking requirements and PCB mounting configurations. NXP USA Inc. backs this product with extensive reliability testing including HTOL and ESD robustness verification. Access our online design center for simulation models and reference circuit layouts. Our application engineers are available to provide technical guidance on impedance matching networks and stability analysis. Contact us today to discuss your project requirements and receive competitive pricing for the BFU550XR215 RF transistor series.
General specs
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
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- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
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- Supplier Device Package: -
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