BFR30,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
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BFR30,215
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Product details
Enhance your circuit designs with the BFR30,215 JFET transistor from NXP USA Inc., a standout in the Discrete Semiconductor Products lineup. This transistor is optimized for low-noise applications, offering exceptional signal clarity and efficiency. Its design focuses on minimizing power loss while maximizing performance, making it a preferred choice for battery-operated devices. The BFR30,215 excels in environments where signal integrity is paramount, such as in instrumentation and measurement systems. Features like high gain and low leakage current ensure reliable operation in demanding scenarios. Applications span across audio processing, signal conditioning, and RF modulation. Industries leveraging this technology include consumer electronics, aerospace, and industrial automation. The BFR30,215 is also well-suited for use in test and measurement equipment, where accuracy is critical. To explore how this JFET transistor can benefit your projects, contact us for a detailed quote and technical support.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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