BFG10/X,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 8V 1.9GHZ SOT143B
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BFG10/X,215
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Product details
The BFG10/X,215 from NXP USA Inc. is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency amplification, offering reliable signal processing with excellent gain characteristics. Ideal for both low-noise and power amplification stages, it ensures stable operation across various frequency ranges. Key features include robust construction for thermal stability, optimized packaging for minimal parasitic effects, and consistent performance under variable load conditions. The BFG10/X,215 is engineered to meet stringent industry standards, making it a trusted choice for RF circuit designers. Its versatile design supports easy integration into existing systems while maintaining high efficiency. Common applications include wireless communication base stations, automotive radar systems, and medical imaging equipment. For aerospace and defense projects, this transistor provides critical signal integrity in radar and satellite communications. In consumer electronics, it enhances performance in smart home devices and IoT connectivity solutions. To inquire about pricing and availability for your specific needs, contact our sales team today or submit an online quote request. Discover how the BFG10/X,215 can optimize your RF designs with NXP USA Inc.'s proven technology.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.9GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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