BC849BW,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BC849BW - SMALL SIG
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03341
Exquisite packaging
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BC849BW,115
$0.02
Product details
The BC849BW,115 by NXP USA Inc. is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the BC849BW,115 ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The BC849BW,115 is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the BC849BW,115 delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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