A3I25D080GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
$40.58
Available to order
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$40.58000
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$40.1742
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$39.7684
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$39.3626
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$38.9568
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$38.551
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A3I25D080GNR1
$40.58
Product details
The A3I25D080GNR1 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the A3I25D080GNR1 delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The A3I25D080GNR1 is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The A3I25D080GNR1 is a versatile solution for modern electronic systems requiring high-frequency operation. Trust NXP USA Inc. for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the A3I25D080GNR1 suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The A3I25D080GNR1 ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the A3I25D080GNR1 is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the A3I25D080GNR1 from NXP USA Inc..
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 29.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 175 mA
- Power - Output: 8.3W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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