A3G26D055N-2600
NXP USA Inc.
NXP USA Inc.
A3G26D055N 2515-2675 MHZ REFEREN
$703.12
Available to order
Reference Price (USD)
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$703.12000
500+
$696.0888
1000+
$689.0576
1500+
$682.0264
2000+
$674.9952
2500+
$667.964
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A3G26D055N-2600
$703.12
Product details
The A3G26D055N-2600 from NXP USA Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The A3G26D055N-2600 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the A3G26D055N-2600 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The A3G26D055N-2600 provides reliable and accurate signal processing in all scenarios. NXP USA Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the A3G26D055N-2600 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the A3G26D055N-2600 from NXP USA Inc. for exceptional RF performance.
General specs
- Product Status: Active
- Transistor Type: -
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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