Shopping cart

Subtotal: $0.00

2PD2150,115

NXP Semiconductors
2PD2150,115 Preview
NXP Semiconductors
NEXPERIA 2PD2150 - POWER BIPOLAR
$0.07
Available to order
Reference Price (USD)
1,000+
$0.12600
2,000+
$0.11480
5,000+
$0.10920
10,000+
$0.10080
25,000+
$0.09520
50,000+
$0.09240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NXP Semiconductors 2PD2150,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2PD2150,115

2PD2150,115

$0.07

Product details

Optimize your circuit performance with the 2PD2150,115, a precision Bipolar Junction Transistor from NXP Semiconductors. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 2PD2150,115 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NXP Semiconductors employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 2PD2150,115 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89

Viewed products

Diotec Semiconductor

PZTA42

$0.00 (not set)
Micro Commercial Co

BC546-AP

$0.00 (not set)
Rohm Semiconductor

BC858BHZGT116

$0.00 (not set)
Diodes Incorporated

FCX493QTA

$0.00 (not set)
onsemi

MMBT2907AM3T5G

$0.00 (not set)
Diodes Incorporated

ZTX758

$0.00 (not set)
NXP USA Inc.

BC856T,115

$0.00 (not set)
Sanken

2SB1259

$0.00 (not set)
onsemi

NJVMJD122T4G-VF01

$0.00 (not set)
Diodes Incorporated

FZT655TA

$0.00 (not set)
Top