NTE3310
NTE Electronics, Inc

NTE Electronics, Inc
IGBT-N-CHAN ENHANCEMENT
$12.44
Available to order
Reference Price (USD)
1+
$12.44000
500+
$12.3156
1000+
$12.1912
1500+
$12.0668
2000+
$11.9424
2500+
$11.818
Exquisite packaging
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Product details
Experience unparalleled power control with the NTE3310 single IGBT transistor by NTE Electronics, Inc. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The NTE3310 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the NTE3310 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 415 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 15A
- Power - Max: 100 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 400ns/500ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P