NTE2932
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 200V 21.3A TO3PML
$7.93
Available to order
Reference Price (USD)
1+
$7.93000
500+
$7.8507
1000+
$7.7714
1500+
$7.6921
2000+
$7.6128
2500+
$7.5335
Exquisite packaging
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NTE2932
$7.93
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
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