NTE2685
NTE Electronics, Inc

NTE Electronics, Inc
TRANS NPN DARL 150V 8A TO3PML
$4.73
Available to order
Reference Price (USD)
1+
$4.73000
500+
$4.6827
1000+
$4.6354
1500+
$4.5881
2000+
$4.5408
2500+
$4.4935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
NTE Electronics, Inc NTE2685 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
Product details
Optimize your circuit performance with the NTE2685, a precision Bipolar Junction Transistor from NTE Electronics, Inc. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The NTE2685 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NTE Electronics, Inc employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The NTE2685 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 6A, 4V
- Power - Max: 75 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PML