NTE2327
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 450V 0.5A TO126
$3.13
Available to order
Reference Price (USD)
1+
$3.13000
500+
$3.0987
1000+
$3.0674
1500+
$3.0361
2000+
$3.0048
2500+
$2.9735
Exquisite packaging
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NTE2327
$3.13
Product details
Optimize your circuit performance with the NTE2327, a precision Bipolar Junction Transistor from NTE Electronics, Inc. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The NTE2327 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NTE Electronics, Inc employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The NTE2327 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 20mA, 200mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Power - Max: 20 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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