NTE128P
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 80V 1A TO237
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
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NTE128P
$3.19
Product details
Enhance your electronic designs with the NTE128P, a premium Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The NTE128P features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The NTE128P is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 350mA, 2V
- Power - Max: 850 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-237AA
- Supplier Device Package: TO-237
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