2N3585
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 300V 2A TO66
$3.08
Available to order
Reference Price (USD)
1+
$13.72000
10+
$12.47400
30+
$11.53833
120+
$10.60292
270+
$9.66733
510+
$9.04365
1,020+
$8.31600
Exquisite packaging
Discount
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2N3585
$3.08
Product details
Optimize your circuit performance with the 2N3585, a precision Bipolar Junction Transistor from NTE Electronics, Inc. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 2N3585 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. NTE Electronics, Inc employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 2N3585 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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