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NJL6407R-TE1

Nisshinbo Micro Devices Inc.
NJL6407R-TE1 Preview
Nisshinbo Micro Devices Inc.
HIGH SPEED PHOTO DIODE
$0.88
Available to order
Reference Price (USD)
1+
$0.87972
500+
$0.8709228
1000+
$0.8621256
1500+
$0.8533284
2000+
$0.8445312
2500+
$0.835734
Exquisite packaging
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NJL6407R-TE1

NJL6407R-TE1

$0.88

Product details

The NJL6407R-TE1 photodiode by Nisshinbo Micro Devices Inc. represents cutting-edge optical sensor technology for precise light detection across multiple industries. This versatile component excels in converting light signals into electrical currents with remarkable efficiency and stability. Designed for engineers seeking reliable performance, the NJL6407R-TE1 features optimized spectral sensitivity and minimal dark current for enhanced measurement accuracy. Its innovative architecture ensures consistent operation across varying temperature ranges and lighting conditions. The photodiode's surface-mount design facilitates straightforward PCB integration while maintaining excellent signal integrity. Key advantages include superior quantum efficiency, wide dynamic range, and exceptional repeatability of measurements. These characteristics make the NJL6407R-TE1 particularly valuable in: 1) Industrial automation for position sensing 2) Solar irradiance monitoring in renewable energy systems 3) Spectrophotometry in laboratory equipment. The device's robust construction resists environmental factors such as humidity and vibration, ensuring dependable performance in field applications. Nisshinbo Micro Devices Inc.'s commitment to quality means each NJL6407R-TE1 undergoes rigorous testing to guarantee meeting specified performance criteria. For organizations requiring custom configurations or bulk quantities, our technical support team can provide tailored solutions. Visit our website to submit your inquiry and receive prompt assistance with your optical sensor requirements.

General specs

  • Product Status: Active
  • Wavelength: 800nm
  • Color - Enhanced: Infrared(NIR)/Blue
  • Spectral Range: -
  • Diode Type: -
  • Responsivity @ nm: 0.47 A/W @ 780nm, 0.42 A/W @ 650nm
  • Response Time: 9ns
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Dark (Typ): 100pA
  • Active Area: 2.16mm²
  • Viewing Angle: -
  • Operating Temperature: -30°C ~ 80°C
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead

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