PSMN3R7-100BSEJ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
$4.62
Available to order
Reference Price (USD)
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$4.62000
500+
$4.5738
1000+
$4.5276
1500+
$4.4814
2000+
$4.4352
2500+
$4.389
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PSMN3R7-100BSEJ
$4.62
Product details
The PSMN3R7-100BSEJ from Nexperia USA Inc. is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the PSMN3R7-100BSEJ demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the PSMN3R7-100BSEJ proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the PSMN3R7-100BSEJ can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.95mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16370 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 405W (Ta)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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