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PSMN1R5-40YSDX

Nexperia USA Inc.
PSMN1R5-40YSDX Preview
Nexperia USA Inc.
MOSFET N-CH 40V 240A LFPAK56
$2.42
Available to order
Reference Price (USD)
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$2.42000
500+
$2.3958
1000+
$2.3716
1500+
$2.3474
2000+
$2.3232
2500+
$2.299
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Nexperia USA Inc. PSMN1R5-40YSDX is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PSMN1R5-40YSDX

PSMN1R5-40YSDX

$2.42

Product details

Enhance your electronic designs with the PSMN1R5-40YSDX single MOSFET transistor from Nexperia USA Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The PSMN1R5-40YSDX features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the PSMN1R5-40YSDX particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the PSMN1R5-40YSDX represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 238W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669

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