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PRMD16Z

Nexperia USA Inc.
PRMD16Z Preview
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 50V 6DFN
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05060
10,000+
$0.04301
25,000+
$0.04048
50,000+
$0.03795
125,000+
$0.03289
Exquisite packaging
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Nexperia USA Inc. PRMD16Z is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PRMD16Z

PRMD16Z

$0.37

Product details

Enhance your electronic designs with the PRMD16Z from Nexperia USA Inc., a top-grade pre-biased bipolar junction transistor (BJT) array. This product is part of the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The PRMD16Z is designed to deliver exceptional performance in amplification and switching applications, offering high reliability and efficiency. Its pre-biased configuration simplifies circuit design and enhances overall performance. The transistor array features excellent thermal management, ensuring stable operation in various environments. Perfect for power management systems, audio amplifiers, and sensor interfaces, the PRMD16Z provides consistent and accurate results. It is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its high gain and low power consumption, the PRMD16Z is ideal for energy-efficient applications. The durable and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about how the PRMD16Z can benefit your project, contact us for a detailed quote and expert technical support.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 480mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1412-6

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