PRMD10Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 50V 6DFN
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05060
10,000+
$0.04301
25,000+
$0.04048
50,000+
$0.03795
125,000+
$0.03289
Exquisite packaging
Discount
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PRMD10Z
$0.37
Product details
The PRMD10Z from Nexperia USA Inc. is a high-performance pre-biased bipolar junction transistor (BJT) array designed for efficient switching and amplification applications. This product is part of the Discrete Semiconductor Products category, specifically tailored for Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It offers excellent thermal stability and consistent performance, making it ideal for various electronic circuits. The PRMD10Z ensures reliable operation in compact designs, providing engineers with a versatile solution for their projects. With its robust construction and advanced technology, this BJT array is a must-have for modern electronics. Key features include integrated pre-biasing for simplified circuit design, low power consumption, and high gain. These transistors are perfect for applications requiring precise control and signal amplification. The PRMD10Z is widely used in automotive electronics, industrial control systems, and consumer electronics. Its compact form factor and high reliability make it suitable for space-constrained applications. For pricing and availability, submit an inquiry today and let our team assist you with your specific requirements.
General specs
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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