PMCA14UNYL
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL MOSFET FOR MOBILE
$0.17
Available to order
Reference Price (USD)
1+
$0.16748
500+
$0.1658052
1000+
$0.1641304
1500+
$0.1624556
2000+
$0.1607808
2500+
$0.159106
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Nexperia USA Inc. PMCA14UNYL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PMCA14UNYL
$0.17
Product details
Enhance your electronic designs with the PMCA14UNYL single MOSFET transistor from Nexperia USA Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The PMCA14UNYL features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the PMCA14UNYL particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the PMCA14UNYL represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 3.3 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DSN1010-3
- Package / Case: 3-XDFN
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