PMBT3906VS,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2PNP 40V 0.2A SOT666
$0.41
Available to order
Reference Price (USD)
4,000+
$0.04853
8,000+
$0.04220
12,000+
$0.03587
28,000+
$0.03376
100,000+
$0.02954
Exquisite packaging
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PMBT3906VS,115
$0.41
Product details
Enhance your electronic designs with the PMBT3906VS,115 BJT Array from Nexperia USA Inc., a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The PMBT3906VS,115 excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The PMBT3906VS,115 is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The PMBT3906VS,115 stands as a testament to Nexperia USA Inc.'s commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the PMBT3906VS,115 and elevate your electronic designs.
General specs
- Product Status: Not For New Designs
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 360mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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